PVD VS CVD in Surface modification of Silicon Carbide

1. Process Principles and Reaction Mechanisms

PVD (Physical Vapor Deposition)

Physical Process Dominates: Solid target materials are converted into gaseous atoms or ions through high-energy particle bombardment (e.g., sputtering) or thermal evaporation (e.g., arc evaporation), which then condense and deposit on the substrate (e.g., SiC) surface to form a coating.

No Chemical Reaction: Material transfer is primarily physical, with no chemical bonding between the target material and the substrate. The coating forms through physical adsorption and diffusion.

CVD (Chemical Vapor Deposition)

Chemical Reaction Dominates: Gaseous precursors (e.g., SiH₄, CH₄) decompose or react with other gases at high temperatures, generating active substances (e.g., SiC) that deposit onto the substrate surface through chemical bonding.

Chemical Bonding: The coating forms strong interfacial bonds (e.g., covalent bonds) with the substrate, resulting in higher adhesion strength. 

2. Comparison of Process Conditions

3. Differences in Coating Characteristics 

Adhesion Strength 

PVD: Coating-substrate bonding is primarily physical, with lower adhesion strength (approximately 10~50 MPa). 

CVD: Strong bonding through chemical bonds (up to hundreds of MPa), offering superior resistance to delamination.

Coating Density 

PVD: Coatings are relatively dense but may have microscopic pores (e.g., "columnar crystal" structures in sputtering). 

CVD: Coatings are highly dense and uniform (due to continuous SiC crystal formation via chemical reactions). 

Thickness and Uniformity

PVD: Suitable for thin coatings (a few nanometers to a few micrometers), with good coverage on complex shapes.

CVD: Capable of depositing thicker coatings (tens of micrometers), but coverage uniformity on complex structures may be inferior. 

Material Purity and Composition

PVD: Coating composition is directly determined by the target material, with high purity (no by-products).

CVD: Precise control of composition (e.g., doping with nitrogen, boron) by adjusting reaction gas ratios. 

4. Application Scenarios

 Typical PVD Applications

 Wear-Resistant Coatings: TiN, DLC (diamond-like carbon) coatings on SiC tools and bearings.

 Optical Films: Reflective/anti-reflective coatings on SiC optical devices.

 Low-Temperature Process Requirements: Anti-corrosion coatings on precision-processed components (e.g., semiconductor packaging molds).

 Typical CVD Applications

 High-Temperature Oxidation-Resistant Coatings: SiC or Si₃N₄ protective layers on SiC composite materials for aerospace applications.

Semiconductor Devices: Epitaxial growth of single-crystal SiC films on SiC wafers (e.g., buffer layers for power devices).

Thick Film Requirements: Radiation-resistant coatings on SiC cladding tubes for nuclear reactors.

5. Summary of Advantages and Disadvantages

6. Selection Criteria 

Choose PVD: For low-temperature processing, complex geometries, high-purity films, or scenarios requiring avoidance of chemical reaction contamination. 

Choose CVD: For applications requiring high adhesion strength, thick film deposition, high-temperature stability, or precise composition control.

Through the above comparison, the appropriate technology (PVD or CVD) can be selected based on specific application requirements (e.g., temperature limitations, coating performance, cost) to achieve optimal results in SiC surface modification.

MG-Optics adopts PVD modification, which not only enhances modification efficiency while ensuring the quality of the modification coating but also reduces costs, enabling mass production. Roughness can reach Ra≤1nm.